23. In this paper, experiment of homogeneous epitaxial, growing of single crystal diamond film by flame method in atmosphere was conducted.
采用大气下火焰法进行了金刚石单晶膜的同质外延实验。
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24. Based on actual measurement results, the influence of process quality of semiconductor substrate wafers on epitaxial growth is described.
本文根据实际测量结果,一叙述了半导体衬底制片质量对外延生长的影响。
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25. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type.
收集器层被选择性地布置在第一外延层的至少一部分上并且被掺杂为具有第二导电类型。
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26. The density and contact effect of the film were improved by the introduction of a transitory high temperature treatment ahead of epitaxial growth.
提出一种在生长温区前进行短暂熔融处理的工艺手段,提高了薄膜的致密性和浸润效果。
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27. The surface smoothness of the single crystal substrate will be the most important factor, which influences the quality of the epitaxial film growth.
单晶基片的表面光洁度指标是影响后续薄膜生长质量的重要因素。
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28. Therefore the dopant concentration profile measured by this method is a better approximation for practical carrier profile in silicon epitaxial layers.
因此,用此法测量的外延层分布是实际载流子分布的一种较好的近似。
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29. The invention is concerned with the manufacture method of the silicon epitaxial slice that is the silicon extension method of remixing arsenic substrate.
本发明公开了一种制造硅外延片的方法,即一种重掺砷衬底的硅外延方法。
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30. The invention is concerned with the manufacture method of the silicon epitaxial slice that is the silicon extension method of remixing arsenic substrate.