A memory cell array includes a plurality of memory cells each of which has a control gate and a floating gate. 存储单元阵列包括多个存储单元，每一存储单元具有控制栅和浮动栅。
Tunneling allows voltage to flow from the control gate to the floating gate through the dielectric layer of oxide which separates them. 允许从隧道流电压控制的浮动栅栅绝缘层氧化物通过分隔他们。
