2. The polysilicon can enhance oxygen precipitation nucleating and growing, acting as the intrinsic gettering.
多晶硅能促进硅片内的氧沉淀成核和生长，起内吸杂作用。
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3. Rapid thermal process (RTP) was used in the intrinsic gettering (IG) process of fast neutron irradiated CZSi.
将快速热处理（RTP）引入到快中子辐照掺氮直拉硅的内吸杂工艺中。
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4. Rapid thermal process (RTP) was first used in the intrinsic gettering (IG) process of fast neutron irradiated CZSi.
首次将快速热处理（RTP）引入到快中子辐照直拉硅的内吸杂工艺中。
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5. The influence of carbon on the defect formation during oxygen intrinsic gettering(IG) process has been studied for CZ silicon.
本文研究了直拉硅单晶的氧内吸杂（IG）工艺中，单晶的碳含量对缺陷形成的影响。
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6. In practical process, a reduction of the reverse dark current is further obtained by improved the gettering technology, stress compensation technology, etc.
在实施过程中，对吸除工艺，应力补偿工艺等作了改进，进一步降低了反向暗电流。
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7. The effect of Ge doped in CZSi on the precipitation and the defect-free zone (DFZ) formation in Ge-doped CZSi wafers after a three step gettering annealing was studied.
运用高温-低温-高温三步退火的本征吸除工艺研究了锗的存在对硅片清洁区形成的影响。
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8. The effect of Ge doped in CZSi on the precipitation and the defect-free zone( DFZ) formation in Ge-doped CZSi wafers after a three step gettering annealing was studied.
运用高温-低温-高温三步退火的本征吸除工艺研究了锗的存在对硅片清洁区形成的影响。
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9. As one of the key processes, phosphorous gettering treatment has been widely applied to improve the electrical properties of crystalline silicon which is the main photovoltaic material.
磷吸杂作为提升晶体硅材料性能的主要手段被广泛应用在太阳电池的生产工艺中。
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10. The ever-smaller feature size of integrated circuit imposes on increasingly stringent requirements on the defect control and internal gettering(IG)capability of Czochralski(CZ)silicon wafers.
集成电路特征线宽的不断减小对直拉（CZ）单晶硅片中的缺陷控制和内吸杂技术提出了愈来愈高的要求。
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11. The ever-smaller feature size of integrated circuit imposes on increasingly stringent requirements on the defect control and internal gettering(IG)capability of Czochralski(CZ)silicon wafers.
集成电路特征线宽的不断减小对直拉（CZ）单晶硅片中的缺陷控制和内吸杂技术提出了愈来愈高的要求。
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Finally, develop two gettering methods to reduce the Ni contamination within the NILC poly-Si film. 最后，发展出两种吸气的方法来降低镍金属诱发侧向结晶复晶矽薄膜中的镍金属残留。
