The discussion woudl be centred on more power MOSFET parallel connection,avoiding parasitic oscillation and the measures of anti-interference. 重点讨论了多个功率场效应管的并联，寄生振荡的防止及抗干扰措施。
The parasitical oscillation with high frequency introduced by the grounding inductance doesn't change the peak value of pre-pulse voltage. 由于接地电感的引入带来的高频寄生振荡不会引起预脉冲幅值的变化。
