Unfortunately, the quality of GaN layers grown on SiC is inferior to that grown on the commonly used sapphire substrate due to the relative poor surface properties of SiC. 不幸的，由于碳化矽差表面性质使得氮化镓在碳化矽成长品质无法与在一般常用蓝宝石基板相比。
Theoretical analysis shows that the cyclone field makes the separation by density come true and also supplies the separating method and conditions by surface floatability. 理论分析表明，旋流力场在实现按密度分离物料的同时，又提供了一种高效的按表面性质分选的方法与条件。
