The invention relates to a method for fabricating silicon quantum wires on an insulating layer, belonging to the field of micro-nano-electronics. 本发明涉及一种制备绝缘层上硅量子线的方法，属于微纳电子学技术领域。
We theoretically study the low temperature electronic states of a quantum wire irradiated under a transversely polarized coherent external electromagnetic field. 摘要从理论上研究了在横向极化的外电磁场辐照下量子线的电子态。
