The technique promises to be of particular value in the study of recombination emission in selenide-implanted semiconductors. 这项技术在研究硒化物植入半导体的复合辐射中有希望获得特殊的重要性。
The plasma temperature is estimated by the recombination edge method and found that the temperature is increased with the increasing of the laser pulse energy. 利用复合辐射吸收边测量了作用过程中毛细管等离子体温度，表明随着激光能量增加电子温度升高。
